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APTGF50SK120T
Buck chopper NPT IGBT Power Module
VBUS Q1 G1 NTC2
VCES = 1200V IC = 50A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile
E1 OUT
0/VBU S SENSE
0/VBUS
NTC1
0/VBUS SENSE
OUT
VBUS
0/VBUS
OUT
E1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 1200 75 50 150 20 312 150A @ 1200V Unit V
APTGF50SK120T - Rev 1 March, 2004
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTGF50SK120T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 500 A Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min 1200 Typ Max 500 2500 3.7 6.5 100 Unit V A V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A RG = 5 W Min Typ 3450 330 220 330 35 200 35 65 320 30 5.4 2.3 35 65 360 40 6.9 3.05 Max Unit pF
nC
ns
mJ
Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A RG = 5 W
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions
50% duty cycle
Min Tc = 70C
Tj = 125C Tj = 25C Tj = 125C
470 1200 4000
Qrr
Reverse Recovery Charge
nC
u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1
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APTGF50SK120T - Rev 1 March, 2004
trr
Reverse Recovery Time
IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/s IF = 60A VR = 800V di/dt =200A/s
Tj = 125C Tj = 25C
Typ 60 2.0 2.3 1.8 400
Max 2.5
Unit A V
ns
APTGF50SK120T
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight IGBT Diode 2500 -40 -40 -40 M5 150 125 100 4.7 160 Min Typ Max 0.4 0.9 Unit C/W V C N.m g
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = R25 T: Thermistor temperature e ae 1 1 ou RT: Thermistor value at T expe B25 / 85 c c T - T /u / e 25 ou e
Min
Typ 68 4080
Max
Unit kW K
Package outline
APT website - http://www.advancedpower.com
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APTGF50SK120T - Rev 1 March, 2004
APTGF50SK120T
Typical Performance Curve
200 Ic, Collector Current (A) 160 120 80 40 0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) On state Voltage vs Junction Temperature 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 Ic=25A
250s Pulse Test < 0.5% Duty cycle V GE = 15V 250s Pulse Test < 0.5% Duty cycle
Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle
50
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle
TJ=25C
40 30 20
TJ=25C
TJ=125C
TJ=125C
10 0
8
0
1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge IC = 50A TJ = 25C VCE=240V VCE=600V
4
300
Ic, Collector Current (A)
250 200 150 100 50 0 0
VCE=960V
TJ=125C TJ=25C
4 8 12 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
16
VCE, Collector to Emitter Voltage (V)
8 7 6 5 4 3 2 1 0 9
VCE, Collector to Emitter Voltage (V)
9
Ic=100A Ic=50A
Ic=100A
Ic=50A
Ic=25A
10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp.
16
Collector to Emitter Breakdown Voltage (Normalized)
1.20 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) Ic, DC Collector Current (A) 1.15
90 80 70 60 50 40 30 20 10 0
DC Collector Current vs Case Temperature
-50
-25
0 25 50 75 100 125 150 TC, Case Temperature (C)
APT website - http://www.advancedpower.com
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APTGF50SK120T - Rev 1 March, 2004
APTGF50SK120T
Turn-On Delay Time vs Collector Current VCE = 600V RG = 5 VGE = 15V td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) 45 Turn-Off Delay Time vs Collector Current
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, TJ=25C
30
250
25 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 180 VCE = 600V RG = 5
VCE = 600V RG = 5
200 0 25 50 75 100 125
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50
tr, Rise Time (ns)
tf, Fall Time (ns)
140
40
TJ = 125C
100 VGE=15V
30 TJ = 25C VCE = 600V, VGE = 15V, RG = 5 20
60
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
0
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Eon, Turn-On Energy Loss (mJ)
24 20 16 12 8 4 0 0
VCE = 600V RG = 5
TJ=125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
28
Turn-On Energy Loss vs Collector Current 8
Turn-Off Energy Loss vs Collector Current VCE = 600V VGE = 15V RG = 5 TJ = 125C
6
4 TJ = 25C 2
TJ=25C, VGE=15V
0 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 18 Switching Energy Losses (mJ) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 Gate Resistance (Ohms) 50 Eoff, 25A Eon, 25A
VCE = 600V VGE = 15V TJ= 125C
8
Switching Energy Losses vs Junction Temp.
VCE = 600V VGE = 15V RG = 5
Eon, 50A
6
Eon, 50A Eoff, 50A
4 Eoff, 50A 2 Eon, 25A Eoff, 25A 0 0 25 50 75 100 TJ, Junction Temperature (C) 125
APT website - http://www.advancedpower.com
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APTGF50SK120T - Rev 1 March, 2004
APTGF50SK120T
Capacitance vs Collector to Emitter Voltage 10000 IC, Collector Current (A) C, Capacitance (pF) Cies Minimum Switching Safe Operating Area 160 140 120 100 80 60 40 20 50 0 0 400 800 1200 VCE, Collector to Emitter Voltage (V)
1000 Coes Cres 0 10 20 30 40 VCE, Collector to Emitter Voltage (V)
100
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9
Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 10 20 30 40 50 IC, Collector Current (A) 60 VCE = 600V D = 50% RG = 5 TJ = 125C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF50SK120T - Rev 1 March, 2004

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